NXP Semiconductors N.V. has announced its collaboration with ZF Friedrichshafen AG on next-generation SiC-based (silicon carbide) traction inverter solutions for EVs.
By leveraging NXP’s advanced GD316x high-voltage (HV) isolated gate drivers, the solutions are designed to accelerate the adoption of 800-V and SiC power devices.
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Both firms say the collaboration is a significant step towards accelerating the electrification of the automotive industry, and creating more safe, sustainable, and energy-efficient EVs for the future.
Dr Carsten Götte, SVP Electrified Powertrain Technology at ZF said: “We look forward to working with NXP to raise the bar for the capabilities and performance of our 800-V traction inverter solutions, which will help us achieve our goals of reducing emissions and promoting sustainability.”
Robert Li, Senior Vice President and General Manager, Electrification at NXP said: “This collaboration is a testament to our commitment to delivering state-of-the-art solutions that enable OEMs to achieve their EV performance and sustainability goals.”
Traction inverters are an important component of an EV’s electric powertrain, converting DC voltage from the battery into a time-varying AC voltage, which drives the vehicle’s motor.
As traction inverters now migrate to SiC-based designs, the SiC power devices need to be paired with HV isolated gate drivers to harness the advantages such as higher switching frequency, lower conduction losses, better thermal characteristics and higher robustness at high voltages, compared to previous generation silicon-based IGBT and MOSFET power switches.
ZF traction inverters, enabled by NXP’s GD316x product family, are already on the road.
