Denso Corporation and FLOSFIA Inc., a tech start-up spun from Kyoto University, are partnering to develop a next-generation power semiconductor device expected to reduce the energy loss, cost, size and weight of inverters used in electrified vehicles (EVs).
Through the joint development project, the two companies aim to improve the efficiency of EV power control units, a key to drive widespread EV use, and usher in a future of safer, more sustainable mobility, Denso says.
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In addition to the joint development partnership, Denso has acquired new shares issued by FLOSFIA in its Series C funding round.
Professor Shizuo Fujita at Kyoto University pioneered the application of corundum structured gallium oxide for use in semiconductors. Such semiconductors provide superior performance to other semiconductors on the market and have a wide band-gap of 5.3 eV and high electric breakdown field strength, meaning they can better withstand high voltage applications. Denso says they will eventually replace today's current silicon (Si) and silicon carbide (SiC) power semiconductors and help further develop the technologies for electrified vehicles.
The two companies will further research and develop technology in high-voltage products for hybrid and electric vehicles, including semiconductors.
