Nissan Motor has been granted a patent for a semiconductor device with a unique structure. The device includes drift, well, and source regions with varying impurity concentrations, allowing for efficient operation. The design ensures a specific distance between regions for optimal performance. GlobalData’s report on Nissan Motor gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Nissan Motor, Hydrogen fuel cells was a key innovation area identified from patents. Nissan Motor's grant share as of April 2024 was 49%. Grant share is based on the ratio of number of grants to total number of patents.
Semiconductor device with improved performance and efficiency
A recently granted patent (Publication Number: US11973108B2) discloses a semiconductor device with a unique structure aimed at improving performance. The device includes a substrate with a first-conductivity-type drift region, a second-conductivity-type first well region, a second-conductivity-type second well region, a first-conductivity-type source region, and a first-conductivity-type drain region. The device also features a gate insulating film and a gate electrode strategically placed to optimize the distances between different regions and ensure efficient operation. Additionally, the patent details methods for manufacturing such semiconductor devices, emphasizing the precise formation of the various regions and layers to achieve the desired configuration.
Furthermore, the patent highlights specific aspects of the semiconductor device, such as the arrangement of the gate insulating film and gate electrode within a groove on the substrate's main surface. It also mentions the use of a wide-bandgap semiconductor material, specifically a silicon carbide substrate, for the device. The patent's claims outline the intricate design and manufacturing processes involved in creating a semiconductor device with improved performance characteristics. Overall, the patent provides valuable insights into the development of advanced semiconductor technologies and underscores the importance of precise engineering and material selection in achieving optimal device functionality.
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GlobalData, the leading provider of industry intelligence, provided the underlying data, research, and analysis used to produce this article.
GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
